[phas-dept] Feb 2 (Thursday) 4 PM - Physics and Astronomy Colloquium

[Heungman Park]

Spring 2017 Colloquium

Department of Physics & Astronomy

Feb. 2, Thursday, 4-5 PM in Science Building 127

(coffee and cookies served at 3:50pm)

All students currently enrolled in Physics 401 and 501 are required to attend all colloquia

Nanophysics:

2D MATERIALS GROWTH
: PROSPECTS AND CHALLENGE
Dr. Luigi Colombo

Texas Instruments Incorporated

[https://lh5.googleusercontent.com/6fXxDeu7-rC80pLZPqSc2_l2KSDD1Vu_aSzWDOWvUcqxLI6o_utYNl8PdsCMO3DBQOxllvmQBbFO48yW2K4CqoH-lj56_fhawoXStsJkI7ZQvxG2JbvTOzebGZxozoHItQroSxoe]

Dr. Luigi Colombo earned BS (1975) degree in Physics from Iona College (NY) and PhD (1980) degree in Materials Science from the University of Rochester (NY). He is now a TI Fellow in the Analog Technology Development group at Texas Instruments responsible for research and development of new materials and devices for analog and logic applications.  He joined TI in 1981 to work on infrared detector materials where he performed research on II-VI compounds, and developed a HgCdZnTe liquid phase epitaxy process and put in production in 1991; this process is still in production today. Luigi has also developed high-k capacitor MIM structures for DRAMs, SiON/poly-Si and Hf-based high-k gate/metal transistor gate stacks for the 45 nm node. He is currently responsible for the development of new materials such as graphene and transition metal dichalcogenides and their integration in new device flows for new devices as part of the Nanoelectronics Research Initiative (NRI).  Over the past 8 years Luigi has developed the first CVD graphene process on Cu in collaboration with researchers at UT Austin.  He has authored and co-authored over 140 refereed papers, made over 170 invited and contributed presentations, has written 4 chapters in edited books, and holds over 100 US and international patents. He is on the Strategic Advisory Council of the European Graphene Flagship, has been on the advisory board of the UC Berkeley Center for Energy Efficient Electronics Science<http://www.e3s-center.org/> External Advisory Board, the SRC-NRI Technical Program Group, and the SRC-STARnet Strategic Advisory Board. He is also an IEEE Fellow, APS Fellow, and is an Adjunct Professor in the Department of Materials Science & Engineering at the University of Texas at Dallas.


Abstract:

Materials have played a critical role in the semiconductor industry since its inception in the early 1950s. Today, we enjoy many electronic devices, gadgets, computers and so forth largely due to the development of critical materials like silicon, silicon dioxide, silicon nitride, and many metals like aluminum, copper, tungsten and so forth. The silicon transistor and integrated circuits have been scaled, made smaller, from a few millimeters down to about 10 nm for state of the art devices.  The industry is now close to what is usually referred to as the end of roadmap or the end of scaling. Over the past 10 years or so there have been significant efforts in the research and development of new materials and devices to enable the industry to go beyond the ultimate scalability of current devices.  Among the many materials being studied is graphene, a two-dimensional material (2DM), and more recently other 2DM.

The isolation of graphene now about a decade ago has given rise to the revitalization of two-dimensional materials (2DM). The 2DM materials under investigation, in addition to graphene, include hexagonal boron nitride (h-BN), semiconducting, metallic, and superconducting transition metal dichalcogenides (TMD). While h-BN is an excellent 2D insulator, TMD materials provide what neither graphene nor h-BN can, bandgap engineering that can be used to create new heterostructure devices that cannot be fabricated with h-BN and graphene. There is hope then to integrate these materials to create new devices for many applications ranging from inkjet printing, photonic applications, flexible electronics, and high performance electronics. However, before the engineering community can develop these products, basic material properties for each application requires careful materials selection so that the materials community can focus on the specific growth techniques to grow the highest quality films. A number of deposition techniques have been used to prepare large area graphene, growth on SiC, precipitation of carbon from metals, and chemical vapor deposition (CVD) on Cu and Ge. TMDs present different opportunities and difficulties in the preparation of low defect density large area single crystals.  Vapor transport, CVD, and molecular beam epitaxy are being used to produce these materials for initial studies of materials physics and device fabrication. A number of device structures are currently under evaluation to take advantage of the basic properties of these materials.  Some of the devices are based on tunneling which can be used to lower the voltage and power dissipation of a logic gate. In this presentation I will review the state of the art materials growth and preparation processes of graphene, h-BN, and a few TMD materials and their prospects for future electronic device applications.


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